• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to an electrical capacitor with variable capacitance comprising a first electrode and a second electrode (5) facing the first electrode and a zone of a dielectric material (10) disposed between said first and second electrodes (5) characterized in the second electrode (5) is formed on the one hand of a primary electrode (6) of an electrically conductive material and, on the other hand, of an additional electrode (7) comprising a state-change material ( 8), the primary electrode (6) and the additional electrode (7) being opposite the first electrode, said state-change material (8) being arranged at least partially in contact with the primary electrode (6). ) and configured to alternatively take a highly resistive state in which the additional electrode (7) is electrically isolated from the primary electrode (6) and a weakly resistive state in which the elect additional rode (7) is electrically conductive with the primary electrode (6) so as to vary the electrically active surface of the second electrode (5).
    公开号:FR3030115A1
    申请号:FR1462194
    申请日:2014-12-10
    公开日:2016-06-17
    发明作者:Bruno Reig；Jean-Claude Bastien
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present invention relates to a variable capacity capacitor comprising a resistive state change material and a capacitance change method. The invention will find application in the field of microelectronics which includes nanotechnologies and in particular in applications requiring components whose properties belong to the field of microelectronics and more particularly in applications requiring components whose properties can be modified as needed. STATE OF THE ART The microelectronics industry is subject to significant constraints of miniaturization in order to produce more and more complex circuits in a smaller and smaller space. For example to meet the needs of mobile telephony it is necessary to make circuits to switch between the different functions of the phone (telephony on different frequency bands, local network, internet, ...) without increasing the size of the apparatus. From US-B1-6,977,198 are known metal-insulator-metal capacitors made by alternating layers of metals and insulators making it possible to put two capacitors having a common electrode in parallel in order to obtain a larger capacitance value on a surface. equivalent. These capacitors do not make it possible to vary the value of the capacitance. In order to cope with this demand, it is necessary to develop variable components whose properties can be modified as needed. In this context, variable capacities are an essential element of the development of electronic circuits and in particular RF (Radio Frequencies) circuits.
    [0002] Switched capacitors are known as electromechanical microsystems (MEMS). In a MEMS switched capacitor as described in US-A1-2012 / 0280393, two capacitance states can be obtained by applying an electrostatic control signal to move a suspended electrode of the capacitance. The displacement of this electrode makes it possible to vary the inter-electrode spacing of the capacitance thus modifying the value of the capacitance. Such a device uses a complex electromechanical design and must be protected by packaging in order to guarantee its reliability. Metallic oxide semiconductor (MOS) stacks and varactor diodes (of the English variable reactor) with variable capacitance are known, or stacks with two electrodes embedding a ferroelectric type material whose dielectric constant can be modified continuously between two values by applying to it an external dielectric field. In these three devices, the capacitance can be changed continuously between two values, but a DC voltage must remain applied to maintain a capacitance value. There is therefore a need to provide a variable capacity capacitor which is easily integrable within microelectronic circuits and preferably requires little power to operate. SUMMARY OF THE INVENTION The present invention proposes for this purpose a variable capacitance capacitor which may be based on the principle of a metal-insulator-metal (MIM) capacitor incorporating a state-change material in order to be able to vary. the value of the capacity. The capacitor according to the invention comprises a first and a second electrode facing one another and spaced apart by a dielectric material. The second electrode is formed on the one hand of a primary electrode of electrically conductive material and on the other hand of an additional electrode comprising a material of state change. The primary electrode and the additional electrode are facing the first electrode. The state change material is at least partially disposed in contact with the primary electrode. The state change material is configured to alternatively take a highly resistive state and a weakly resistive state. In the weakly resistive state, the state change material is conductive electrically conductive with the primary electrode. In the highly resistive state, the state change material is resistant to isolate the primary electrode. The electrically active surface of the second electrode is different depending on the state of the state change material. This change of electrically active surface causes a variation of capacitance of the capacitor.
    [0003] In this way, when the state change material is in a highly resistive state, the electrically active surface of the second electrode facing the first electrode corresponds to the surface of the primary electrode facing the first electrode. When the state change material is in a weakly resistive state, the electrically active surface of the second electrode 30 corresponding to the sum of the surfaces of the primary electrode and the additional electrode facing the first electrode. The invention has no moving element, so it does not require a suitable environment. The capacitor according to the invention can take at least two capacitance values. The change between the different capacitance values is obtained as a function of the state of the state change material. Advantageously, the capacitor 3030115 3 comprises control means configured to apply a control signal adapted to the state of change material. Once the change is made, the state change material remains in a stable state until the next change. Preferably, once the change of state 5 has been effected, the control signal can be cut off, the material is stable in its state until the application of a new control signal. There is therefore no energy consumption outside the phases of change of state. In addition, the invention uses state-change materials such as phase-change materials, which have a very good compatibility with MOS technologies making it possible to produce on the same silicon wafer the capacitor which is the subject of the invention. and active circuits. According to a preferred embodiment, the additional electrode comprises a layer of electrically conductive material arranged so that the state-change material is placed between the primary electrode and the layer of electrically conductive material of the electrode. additional. The invention also relates to a variable capacity capacitor comprising a plurality of stacks as described above. Advantageously, each stack is joined with the stack n + 1 by the first electrode of the stack n which acts as the primary electrode of the second electrode of the stack n + 1.
    [0004] Advantageously, the first electrode n + 1 stack is electrically connected to the second electrode of the stack n. BRIEF DESCRIPTION OF THE FIGURES The objects, objects, as well as the features and advantages of the invention will become more apparent from the detailed description of an embodiment thereof, which is illustrated by the accompanying figures in which: FIG. Sectional view of a variable capacity capacitor according to a first embodiment. Figure 2: Electrical schematic of the capacitor shown in Figure 1. Figure 3: Sectional view of a variable capacitance capacitor according to a first variant of the first embodiment. Figure 4: Partially exploded perspective view according to Figure 3. Figure 5: Partially exploded perspective view of a second variant of Figure 3. Figure 6: Partially exploded perspective view of a third variant of the first embodiment .
    [0005] Figure 7: Sectional view of a variable capacity capacitor according to a second embodiment. Figure 8: Sectional view of a variable capacity capacitor according to a third embodiment.
    [0006] Figure 9: Sectional view of a variable capacity capacitor comprising two stacks according to the first embodiment. Figure 10: Electrical diagram of the capacitor shown in Figure 9. The accompanying drawings are given by way of examples and are not limiting of the invention. They are schematic representations of principle intended to facilitate the understanding of the invention and are not necessarily at the scale of practical applications. In particular, the relative thicknesses of the different layers and films are not representative of reality. DETAILED DESCRIPTION OF THE INVENTION Before proceeding with a detailed review of embodiments of the invention, optional features are given below which may optionally be used in combination or alternatively. It will be recalled first of all that the invention relates, in one aspect, to a variable capacitance electrical capacitor comprising at least a first stack comprising a first electrode and a second electrode facing the first electrode and an area of one dielectric material disposed between said first and second electrodes characterized in that the second electrode is formed on the one hand of a primary electrode of an electrically conductive material and, on the other hand, of an additional electrode comprising a material of change of state, the primary electrode and the additional electrode being opposite the first electrode, said change of state material being disposed at least partially in contact with the primary electrode and configured to take alternately a highly resistive state in which the additional electrode is electrically isolated from the primary electrode and a state f substantially resistive wherein the additional electrode is electrically conductive with the primary electrode so as to vary the electrically active surface of the second electrode. Advantageously, the additional electrode comprises a layer of electrically conductive material disposed so that the state change material is at least partially placed between the primary electrode and the electrically conductive material layer of the additional electrode. Preferably, the layer 30 of electrically conductive material of the additional electrode is in contact with the layer of material of change of state. Advantageously, the primary electrode and the additional electrode are at least partially superimposed.
    [0007] Advantageously, the first electrode comprises a first layer of electrically conductive material and a second layer of electrically conductive material electrically connected so as to encase the area of dielectric material, the area of dielectric material encasing the second electrode. Advantageously, the primary electrode and the additional electrode are at least partially in the same plane. Advantageously, the change of state material comprises a discontinuous layer forming plots placed in a matrix of dielectric material. Advantageously, the primary electrode is a discontinuous layer configured to allow at least partial overlap with the discontinuous layer of state-change material, preferably placed in a matrix of dielectric material. Advantageously, the layer of electrically conductive material of the Additional electrode is a discontinuous layer configured to allow at least partial overlap with the discontinuous layer of change of state material, preferably placed in a matrix of dielectric material. Advantageously, the capacitor comprises means for controlling the state of the state of change material. Advantageously, the material with a change of state is a bistable material, preferably in a weakly resistive state and in a highly resistive state, in the absence of action of the control means. Advantageously, the control means are shaped to apply a potential difference between the primary electrode and the layer of electrically conductive material of the additional electrode. Advantageously, the control means comprise a heat source configured to generate a heating of the state change material. Advantageously, the heat source is a source of light. Advantageously, the light source is a pulsed laser signal. Advantageously, the capacitor comprises at least two stacks in which one of the electrodes chosen from the first or the second electrode of a stack n being common to an electrode chosen from the second or the first electrode of an n + 1 stack, said common electrode being formed for one part of a primary electrode of the n + 1 stack of electrically conductive material and, on the other hand, of an additional electrode comprising a state-change material, the electrode primary and the additional electrode being opposite a first electrode of the stack n + 1, said state change material being disposed at least partially in contact with the primary electrode and configured to take alternately a state strongly resistive in which the additional electrode is electrically insulated from the primary electrode and a weakly resistive state in which the electrode is electrically isolated. The onnel is in electrical conduction with the primary electrode so as to vary the electrically active surface of said common electrode. Advantageously, the first electrode of a stack n comprises a first layer of electrically conductive material and a second layer of electrically conductive material electrically connected so as to encase the second electrode of the stack n and the zone of dielectric material and in which the primary electrode of the second electrode of the n + 1 stack is formed by the second layer of electrically conductive material of the first electrode of the stack n. Advantageously, the first electrode of the n + 1 stack is electrically connected to the primary electrode of the stack n so as to encase the second electrode of the stack n + 1. According to another aspect the invention relates to a method for varying the capacitance of a capacitor with variable capacitance as described above, characterized in that it comprises the application of a change of state control signal. of the state change material so as to pass it from a highly resistive state in which the additional electrode is electrically isolated from the primary electrode and a weakly resistive state in which the additional electrode is electrically conductive with the primary electrode so as to vary the electrically active surface of the second electrode and thus the capacity of the capacitor. Advantageously, the application of a control signal is of a duration limited to the change of state of the state change material, when the change of state material is bistable. Advantageously, the control signal is a potential difference applied between the layer of electrically conductive material of the primary electrode and the layer of electrically conductive material of the additional electrode.
    [0008] Advantageously, the control signal is a heating of the state change material generated by a heat source.
    [0009] Advantageously, the heat source is a source of light. Advantageously, the light source is a pulsed laser signal. It is specified that in the context of the present invention, the term "over", "overcomes" or "underlying" or their equivalents do not necessarily mean "in contact with". For example, the deposition of a first layer on a second layer does not necessarily mean that the two layers are in direct contact with one another, but that means that the first layer at least partially covers the second layer. being either directly in contact with it or separated from it by another layer or another element.
    [0010] It is established that the capacitance of a capacitor is essentially determined by the geometry of the electrodes and the nature of the insulator (s); the following simplified formula is often used to estimate its value: C = E -e Formula I with S: surface of the electrodes opposite, e distance between the electrodes 15 and c the permittivity of the dielectric. The term electrically active surface of the second electrode, the surface of the second electrode 5 opposite the first electrode 2 and which is in an electrically conductive state. The capacitor according to the invention is formed on a substrate 20, for example passive silicon. The capacitor according to the invention comprises a first stack comprising a first electrode 2 and a second electrode 5 facing one another and spaced apart by an area of dielectric material 10. More generally, the capacitor comprises a first frame and a second armature. The parts of the first armature and of the second armature opposite respectively constitute the first electrode 2 and the second electrode 5. The zone of dielectric material 10 spaces the first electrode 2 and the second electrode 5. The term "zone" means one or more layers of dielectric material connected to each other. Zone 10 preferably comprises at least one layer of at least one dielectric material and as illustrated in FIGS. 1 and 3 to 7 at least two connected layers. By way of example, the at least one dielectric material is chosen from SiO 2 or SiN. Preferably, the dielectric material is deposited by PECVD (English Plasma-Enhanced Chemical Vapor Deposition). The dielectric material is preferentially the same throughout zone 10.
    [0011] The first electrode 2 is made of electrically conductive material. Preferably, the first electrode comprises at least a first layer of electrically conductive material 3. According to the invention, the second electrode 5 comprises a primary electrode 6 and an additional electrode 7. The primary electrode 6 comprises a layer of electrically conductive material and preferentially the primary electrode 6 is made of electrically conductive material The additional electrode 7 comprises a state-change material 8. The primary electrode 6 and the additional electrode 7 are opposite the first electrode 2.
    [0012] The primary electrode 6 and the additional electrode 7 are at least partially in contact with each other. According to an example illustrated in FIGS. 1 to 7, the primary electrode 6 and the additional electrode 7 are superimposed at least partially. According to another example illustrated in FIG. 8, the primary electrode 6 and the additional electrode 7 are on the same stacking level, preferably in contact in the plane. The state change material 8 is a material in which a resistive transition can be observed. The state change material 8 is configured to alternately assume a highly resistive state and a weakly resistive state. The state change material 8 is said to be in a highly resistive state, when its resistance is typically of the order of 1 Mn. The state change material 8 is said to be in a weakly resistive state when its resistance is typically of the order of 1 -5. The ratio defined between the resistance of the state change material in a highly resistive state and its resistance in a weakly resistive state is between 10, preferably 100, and 1,000,000. A ratio of 10, preferably 100, is defined between the resistance of the state change material in a highly resistive state and its resistance in a weakly resistive state. The capacitance of the capacitor Ctot is measured between the two terminals 24, 25 of the first electrode 2 and the primary electrode 6 of the second electrode 5. In the highly resistive state, the resistance of the state change material 8 30 is such that it behaves as an insulator and does not conduct electrical current. In the weakly resistive state, the resistance of the state change material 8 is such that it allows conduction of the electric current. This difference in state causes a variation of the electrically active surface of the second electrode 5 and makes a variation in capacitance of the capacitor according to formula I given above. In a highly resistive state, the electrically active surface of the second electrode 5 corresponds to the surface of the primary electrode 6 facing the first electrode 2. In a weakly resistive state, the electrically active surface of the second electrode 5 corresponds to the sum of the surface of the primary electrode 6 opposite the first electrode 2 and 5 of the surface of the additional electrode 7 facing the first electrode 2. According to a preferred embodiment illustrated on the whole In the figures, the additional electrode 7 comprises a layer of electrically conductive material 9 arranged so that the state-change material 8 is located at least partially between the primary electrode 6 and the electrically conductive material layer 9 of the electrically conductive material 9. Additional electrode 7. According to a first possibility of this embodiment, the first electrode 2 comprises a first layer of mat electrically conducting electrode 3 and a second electrically conductive material layer 4 electrically connected. The first layer of electrically conductive material 3 being at least partially facing the primary electrode 6 spaced apart by at least a portion of the zone of dielectric material 10. The second layer of electrically conductive material 4 being at least partially opposite the additional electrode 7 spaced apart by at least a portion of the zone of dielectric material 10. The first electrode 2 encases the second electrode 5 and the zone of dielectric material. The first electrode has a U shape. More precisely, it is possible to obtain the stack illustrated in FIG. 1 and its variants illustrated in FIGS. 3 to 6. Defined differently, the capacitor according to the invention comprises successively at least one stack comprising of low at the top at least: a first capacitor comprising: a first layer of conductive material forming a first electrode, a first layer of the dielectric material, a second layer of conductive material forming a second electrode, a second capacitor comprising: a third layer of conductive material forming a third electrode, a second layer of the dielectric material, a fourth layer of conductive material forming a fourth electrode.
    [0013] According to this definition, the stack of the capacitor comprises a layer of material of change of state disposed between the second electrode and the third electrode configured to alternately take a weakly resistive state in which the second electrode and the third electrode are in continuity. and a highly resistive state wherein the second electrode and the third electrode are electrically insulated and the first layer of conductive material and the fourth layer of conductive material are electrically connected. A first capacitor C1 of the capacitor is formed between the first electrode 2 and the primary electrode 6 spaced apart by at least a portion of the area of dielectric material 10. A second capacitor C2 of the capacitor is formed between the first electrode 2 and the additional electrode 7 spaced apart by at least a portion of the area of dielectric material 10. A portion of the area of dielectric material 10 is defined as a portion of the area forming a layer between two layers of electrically conductive material. When the state-change material 8 is in a weakly resistive state: the conductive material layer 9 of the additional electrode 7 is electrically connected to the primary electrode 6. In this case, the conductive material layer 9 of the additional electrode 7 and the primary electrode 6 form a common electrode, the second electrode 5. As the first layer of conductive material 3 and the second layer of conductive material 4 also form a common electrode by construction, the first electrode 2 , then the second capacitor C2 is placed electrically in parallel on C1 between the two terminals 24, 25 of the capacitor. The total capacity Ctot of the capacitor is therefore the resultant of capacitors C1 and C2 placed in parallel; the layer of conductive material 9 is in electrical continuity with the primary electrode 6. The electrically active surface of the second electrode 5 comprises the surface of the primary electrode 6 facing the first electrode 2, more precisely with respect to the first layer of conductive material 3 and the surface of the additional electrode 7, i.e. the conductive material layer 9 if present or failing that the surface of the state change material 8, facing the first electrode 2, more precisely the second electrically conductive material layer 4; and since the electrical model of the state change material 8 can be considered as a resistor R1, whose value depends on the state of said state change material 8, in parallel with a capacitance C3, whose value depends mainly on the width of the primary electrode 6, the thickness of the state change material 8 and the thickness of the conductive material layer 9 of the additional electrode 7 and as shown in FIG. FIG. 2. According to this diagram, when the state-change material is in a weakly resistive state, the layer 5 of conductive material 9 of the additional electrode 7 is electrically connected to the primary electrode 6 by the resistor R1 and can be considered as a common electrode, the second electrode 5. As the first layer of conductive material 3 and the second layer of conductive material 4 also form a common electrode by constru ction, the first electrode 2 then the second capacitance C2 is placed electrically in parallel on C1 between the two terminals 24, 25 of the capacitor. The total capacitance Ctot of the device is therefore the resultant of capacitances C1 and C2 placed in parallel, C3 being negligible. On the contrary, when the state-change material 8 is in a highly resistive state: the conductive material layer 9 of the additional electrode 7 is electrically isolated from the primary electrode 6 by the strong resistance of the material to be changed 8. In this case the total capacity Ctot of the device is only equal to Cl; only the primary electrode 6 constitutes an electrically active surface of the second electrode 5; and since the electrical model of the state-change material 8 can be considered as a resistor R1, the value of which depends on the state of said state-change material 8, in parallel with a capacitance C3, the value of which depends on mainly the width of the primary electrode 6, the thickness of the state change material 8 and the thickness of the conductive material layer 9 of the additional electrode 7 and as shown in FIG. 2 According to this scheme, when the state change material 8 is in a highly resistive state, the layer of electrically conductive material 9 of the additional electrode 7 is electrically isolated from the primary electrode 6 by the strong resistance of the material to State change 8 and electrically connected to the primary electrode 6 by a capacitor C3. In this case, the total capacity Ctot of the capacitor can be considered as the result of the capacitance Cl placed in parallel with the two capacitances series C2 and C3. The layers of electrically conductive materials 3, 4, 6, 9 are, for example, metals such as nickel (Ni), silver (Ag), aluminum (Al), copper (Cu), gold (Au) or tungsten ('N) deposited for example by a method 3030115 12 PVD (Physical vapor Deposition). In addition to metals, these materials can be any type of electrical conductors such as semiconductors (doped silicon for example), metal oxides (example: ruthenium oxide RuO2, iridium oxide lrO2) transparent conductive films (example: oxide conductor 5 as ITO, conductive polymer as the PEDOT). The geometric patterns of the layers of electrically conductive materials are then formed for example by photolithography etching steps. Preferentially TiN intermediate layers for example may be deposited between the conductive material layers, the dielectric material and the state change material to form passivation layers or tie layers. These layers are neither detailed nor shown in the figures because they are not functional in the context of the present invention. The capacitor according to the invention comprises means for controlling the state of the state-change material 8.
    [0014] Preferably, according to the invention, the state change materials 8 are of the phase change material type and preferentially use Joule heating to change state. According to one possibility, this Joule heating is preferably performed by applying a potential difference to generate a current pulse in the state change material 8. Advantageously, the resistive transition of the state change material 8 is Controlled by the layer of electrically conductive material 9 of the additional electrode 7. The control means may optionally comprise a control line connected to the layer of electrically conductive material 9 for applying a bias voltage between the control line. and the terminal 24 of the primary electrode 6. The polarization voltages necessary to obtain the change of state of the state-change material 8 are of the order of a few volts (1 to 10V) and the requested power of the This order makes it possible to bring the control signal of the change of state by an independent command line. terminal 24, 25 of the input and output, which allows the decoupling of the control signal of the signal to be transmitted. Alternatively, any heating source for intense and brief heating of the state change material 8 may be used. For example, the change of state may be controlled by means of a laser pulse as illustrated in FIG. 6. The control means comprise a heat source, for example a light source, in particular pulsed light type laser. According to this possibility, the conductive material layer 9 of the additional electrode 7 can be kept as a simple floating electrode or can be removed. According to an embodiment illustrated in FIGS. 3 to 5, the state change material 8 can be replaced by at least one parcel 11 of this state-change material placed in a matrix of dielectric material 10. The geometric dimensions of this parcel are small enough to allow a more efficient resistive transition, ie with a higher resistance contrast. The change of state also requires less energy.
    [0015] Preferably, the stack 1 of the capacitor comprises a network of plots 11, illustrated in FIGS. 3 to 5. This networking makes it possible to reduce the total resistance between the primary electrode 6 and the conductive material layer 9 of the electrode. additional 7 when the state change material 8 is in a weakly resistive state.
    [0016] The parcels 11 can take different geometric shapes, be they lines or studs. The plots 11 may be controlled by common or independent control means. In the case as in FIGS. 3 and 4, the control line of the conductive material layer 9 of the additional electrode 7 can be replaced by a command line network, each line controlling the resistive transition of a parcel 11 of material with change of state 8. It is then possible to independently control each parcel 11 to be certain to have a complete resistive transition on all the parcels 11. This individual control also allows 25 to be able to switch separately each because of 11 so that several resistance values can be obtained. The state change material 8 thus becomes an adjustable resistive layer that can take several resistance values. The conductive material layer 9 of the additional electrode 7 is similar to a control electrode of the state of the state change material 8. In the embodiment where the state change material 8 is in the form of plots 11, the conductive material layer 9 of the additional electrode 7 is preferably in the form of a grid. This grid is preferably complementary to the network of parcels 11 of the state change material 8. The shape of the grid is preferentially configured to allow at least partial overlap with the parcels 11. There is contact between the parcels 11 and the grid.
    [0017] This grid form as in FIG. 5 makes it possible to concentrate the electric field lines and / or the current flow in the plots. The primary electrode 6 can be optimized in the same way. According to a second embodiment of the invention, the capacitor is defined in a plane in order to realize an adjustable capacitor using less technological levels. An example of this embodiment is illustrated in FIG. 7. The capacitor comprises a first electrode 2 comprising a layer of planar conductive material 3 and a second electrode 5 comprising a primary electrode 6 made of conductive material and an additional electrode 7 comprising a 10 state change material 8 and a layer of electrically conductive material 9. The state change material 8 is placed between the primary electrode 6 and the layer of electrically conductive material 9. A zone of dielectric material 10 separates the first electrode 2 of the second electrode 5. The layer of electrically conductive material 9 is disposed facing the first electrode 2, more precisely facing the layer of electrically conductive material 3. In this way, the stack 1 of the capacitor comprises at least one level of conductive material less than the embodiment illustrated in FIGS. 1 through 6. The stack comprises from bottom to top on a substrate 20 a layer of conductive material 3 forming the first electrode 2, then an area of dielectric material 10, and a layer of electrically conductive material 9 forming part of the additional electrode 7, then a state-change material 8, and then a layer of electrically conductive material forming the primary electrode 6. This primary electrode 6 forms several levels of conductive material from top to bottom, more precisely on three levels: above and in contact with the state change material 8, level 21, then on the same level 22 as the layer of electrically conductive material 9 but separated by an area of dielectric material 10, then at level 23 of the conductive material layer 3 of the first electrode 2 but separated by an area of dielectric material 10.
    [0018] The level 22 of the primary electrode 6 facing the layer of conductive material 3 of the first electrode 2 spaced apart by a zone of dielectric material 10 forms a first capacitor C1. A second capacitor C2 is formed by the layer of conductive material. electrically 9 facing the layer of conductive material 3 of the first electrode 2 spaced apart by a zone of dielectric material 10.
    [0019] When the state change material 8 is in a highly resistive state, the total capacitance measured between the terminals 24, 25 of the first electrode 2 and the second electrode 5 is close to the value of the capacitance C1 measured between the parts of the first electrode 2 and the second electrode 5 vis-à-vis that is to say 5 between the first electrode 2 vis-à-vis the primary electrode 6. When the material change of state is in a weakly resistive state then the primary electrode 6 can be considered as electrically connected to the conductive material layer 9 of the additional electrode 7. The primary electrode 6 and the conductive material layer 9 of the additional electrode 7 thus form the second electrode 5. In this case the total capacitance measured between the terminals 24, 25 of the first electrode 2 and the primary electrode 6 is close to the resultant of capacitors C1 and C2 pla C 2 is the capacitance formed by the portions facing the first electrode 2 and the state change material 8 or the conductive material layer 9 of the additional electrode 7 if present.
    [0020] The invention also relates to a capacitor comprising n stacks, being between 2 and 10, more preferably between 2 and 5. For the remainder of the description, we speak of first and second stack: a first stack 1 and a second stack 13. Preferably, the stacks are identical. Each stack advantageously comprises a first electrode, a second electrode and a layer of dielectric material. One of the two electrodes comprises a layer of change of state material. The capacitor comprises several levels of state change materials 8, 18. In FIG. 9 is given an example comprising two stacks 1 and 13, ie two layers of state change materials 8, 18. Advantageously, the system 25 comprises an electrode common to the first stack 1 and to the second stack 13. According to one embodiment, the common electrode is the first electrode 2 of the first stack 1 which then constitutes the primary electrode of the second stack 13. According to the invention, the first stack 1 comprises, as described above, a first electrode 2 and a second electrode 5 opposite the first electrode 2 and an area of a dielectric material 10 disposed between said first and second electrodes, the second electrode 5 is formed on the one hand of a primary electrode 6 of an electrically conductive material and, on the other hand, of an additional electrode 7 comprising a state-change material 8, 35 the primary electrode 6 and the additional electrode 7 being opposite the first electrode 2, said change of state material 8 being arranged at least partially 3030115 16 in contact with the primary electrode 6 and configured to take alternately a highly resistive state in which the additional electrode is electrically isolated from the primary electrode and a weakly resistive state in which the additional electrode is electrically conductive with the primary electrode 6 so as to vary the electrically active surface of the second electrode 5. The second stack 13 comprises a second electrode 14 and a first electrode 17 opposite the second electrode 14 and a zone of a dielectric material 10 arranged between said second and first electrodes, the second electrode 14 is formed on the one hand of a primary electrode of an electrically conductive material and, on the other hand, of an additional electrode 16 comprising a state of change material 18. The primary electrode and the additional electrode 16 facing the first electrode e 17, said state change material 18 being disposed at least partially in contact with the primary electrode and configured to alternately take a highly resistive state in which the additional electrode 16 is electrically isolated from the primary electrode and a weakly resistive state in which the additional electrode 16 is in electrical conduction with the primary electrode so as to vary the electrically active surface of the second electrode 14. Preferably, the primary electrode of the second stack 13 is the first electrode 2 of the first stack 1 and more precisely the layer of conductive material 4. The first electrode 17 of the second stack 13 is electrically connected to the second electrode 5 of the first stack 1. According to the invention, the additional electrode 16 of the second electrode 14 comprises the state change material 18 and a layer of conductive material Preferably, the resistive transitions of these two layers of state change materials 8, 18 are controlled by two separate control lines formed by layers of electrically conductive materials 9, 15. With a capacitor with two stacks such as As described above, four different capacitance values can be obtained: Value 1: The two state change materials 8, 18 are in a highly resistive state. In the first stack: the second electrode 5 of the first stack 1 is formed by the first primary electrode 6 only, facing the first layer of conductive material 3 of the first electrode 2; The layer of conductive material 9 of the additional electrode 7 is electrically isolated from the primary electrode 6 by the strong resistance of the state change material 8. In the second stack 13: 5 - the layer of conductive material 15 of the additional electrode 16 is electrically isolated from the primary electrode 4 by the high resistance of the state change material 18. In this case the total capacity Ctot of the device is only equal to C1 formed between the primary electrode 6 of the first stack and the layer of conductive material 3 of the first stack 1. - Value 2: the first layer of material of change of state 8 is in a weakly resistive state and the second layer 18 in a highly resistive state. In the first stack: the second electrode 5 of the first stack is formed by the primary electrode 6 facing the first conductive material layer 3 of the first electrode 2 and the electrically conductive material layer 9 of the electrode additional 7 facing the second layer of conductive material 4 of the first electrode 2. In the second stack 13: 20 - the layer of conductive material 15 of the additional electrode 16 is electrically isolated from the primary electrode 4 of the second stack by the high resistance of the state change material 18. In this case the total capacity Ctot of the device is equal to the resultant of the capacitors Cl and C2 placed in parallel, C1 being formed between the primary electrode 6 of the first stack and the layer of conductive material 3 of the first stack 1 and C2 between the layer of conductive material 4 of the first electrode 2 of the first stack ent 1 and the conductive material layer 9 of the additional electrode 7 of the first stack. Value 3: the first layer of state change material 8 is in a highly resistive state and the second layer 18 in a weakly resistive state. In the first stack: - the second electrode 5 is formed by the primary electrode 6 only, facing the first layer of conductive material 3 of the first electrode 2; the conductive material layer 9 of the additional electrode 7 is electrically isolated from the primary electrode 6 by the strong resistance of the state change material 8.
    [0021] In the second stack 13: the second electrode 14 is formed by the primary electrode 4 electrically connected to the conductive material layer 3 of the first electrode 2 of the first stack 1 and by the layer of electrically conductive material 15 of the additional electrode 16 of the second stack 13 facing the layer of conductive material of the first electrode 17 electrically connected to the primary electrode 6 of the first stack 1. In this way, the total capacity Ctot of the capacitor is equal to the resultant capacitors Cl and C4 placed in parallel, C1 being formed between the primary electrode 6 of the first stack 1 and the conductive material layer 3 of the first stack 1 and C4 between the first electrode 17 and the conductive material layer 15 of the second Stacking 13. - Value 4: The two layers of 8,18 state change materials are in a weakly resistive state tif.
    [0022] In the first stack: the second electrode 5 of the first stack 1 is formed by the primary electrode 6 facing the first layer of conductive material 3 of the first electrode 2 and the layer of electrically conductive material 9 of the additional electrode 7 opposite the second layer of conductive material 4 of the first electrode 2. In the second stack 13: the second electrode 14 is formed by the layer of conductive material of the primary electrode 4 electrically connected to the layer of conductive material 3 of the first electrode 2 and the layer of electrically conductive material 15 of the additional electrode 16 facing the layer of conductive material of the first electrode 17 electrically connected to the primary electrode 6 of the first stack 1 In this way, the total capacity Ctot of the capacitor is equal to the resultant of the capacitors Cl, C2 and C4. parallel ac, C1 being formed between the primary electrode 6 of the first stack 1 and the layer of conductive material 3 of the first stack 1, C2 between the layer of conductive material 4 of the first electrode 2 of the first stack 1 and the layer of conductive material 9 of the first stack 1 and C4 between the layer of conductive material of the first electrode 17 and the layer of conductive material 15 of the second stack 13.
    [0023] According to a possibility of the invention, the state change material 8, 18 is a phase change material such as Ge2Sb2Te5 or GeTe in which a resistance contrast of 106 can be obtained following heating by Joule effect. This change is due to the rapid and reversible change between a highly resistive amorphous phase and a weakly resistive crystalline phase. According to one possibility, the state change material 8, 18 is an insulator such as a chalcogenide glass, for example GeTe, GeSe, GeS, AsS or an insulator such as an oxide such as SiO 2 or WO 3. Preferably, according to this possibility, the primary electrode 6 is made of nickel or aluminum and the additional electrode 7 comprises a layer of electrically conductive material 9 made of silver or copper. Advantageously, according to this possibility, the state change material 8, 18 is doped with a movable metal element such as silver or copper. The application of a polarized electric pulse between the primary electrode 6 and the layer of electrically conductive material 9 of the additional electrode 7 makes it possible to form a conductive bridge between the primary electrode 6 and the layer of electrically conductive material 9 of the additional electrode 7, or conversely to break this conductive bridge by inverting the polarization, by ion-displacement or oxidation-reduction mechanisms. According to another possibility, the state-change material 8, 18 is an active oxide such as a metal transition oxide of NiO, TiO, CuO, ZrO, HfO type. The resistive transition is achieved by creating a conductive bridge in the oxide upon the application of an electric field between the primary electrode 6 and the electrically conductive material layer 9 of the additional electrode 7 or failure of this bridge when inverting the polarization. The state change material 8, 18 can be deposited by PVD or CVD (Chemical Vapor Deposition) methods, and the patterns are then formed by photo etch etching steps. In the embodiment comprising several layers of state-change materials 8, 18, as in the capacitor system according to the invention, the layers of state-change materials 8, 18 may be the same or different.
    [0024] The invention also relates to a method of varying the capacitance of a capacitor as described above. The method comprises applying a control signal of the state of the state change material 8 so as to pass it from a highly resistive state in which the additional electrode 7 is electrically isolated from the electrode 6 and a weakly resistive state in which the additional electrode 7 is electrically conductive with the primary electrode 6 3030115 so as to vary the electrically active surface of the second electrode 5 and thus the capacity of the capacitor. A detailed example of the steps for manufacturing a capacitor according to the invention is given below. On a support substrate, for example a passive silicon substrate by a SiO 2 (silicon dioxide) layer, a first electrode 2 is made. This electrode 2 of conductive material is for example made with W (Tungsten) thickness 200nm deposited by PVD (Physical Vapor deposition) and the pattern of the electrode 2 is made by photolithography and etching RIE (reactive ionic etching).
    [0025] A first level of dielectric material 10 is produced, for example by PECVD (Plasma Enhanced Chemical Vapor Deposition) of 100 nm SiN, then photolithography and etching of the patterns by RIE. Deposition of a second level of electrically conductive material forming the primary electrode 6 consisting for example of a 50nm thick TiN layer and a 200nm thick W layer deposited by PVD. The patterns are made by photolithography and then successive RIE etching W and TiN. The state-change material 8, for example GeTe with a thickness of 100 nm, is then deposited between two TiN layers of 5 nm. The whole of this stack is deposited by PVD then the patterns are formed by photolithography and etching IBE 20 (Ion Beam Etching) of the stack. Deposition of a third level of electrically conductive material 9 partially forming the additional electrode 7 consisting for example of a TiN layer 15nm thick and a W layer of thickness 200nm deposited by PVD. The patterns are made by photolithography and then successive RIE etching of W and TiN. A second level of dielectric material 10 is produced, for example by a PECVD deposition of 100nm of SiN, then photolithography and etching of the patterns by RIE. Finally the last layer of electrically conductive material partially forming the first electrode 2 is made. This electrode of conducting material 4 is for example composed of a stack of TiN of thickness 50 nm and W of thickness 200nm deposited by PVD and the electrode pattern is made by a photolithography step and RIE etching. successive VV and TiN.
    [0026] 3030115 21 REFERENCES 1. First stack 2. First electrode 5 3. First layer of electrically conductive material 4. Second layer of electrically conductive material / Primary electrode 5. Second electrode 6. Primary electrode 7. Additional electrode 10 8. Change material state 9. Layer of electrically conductive material 10. Zone of dielectric material 11. Field of material with change of state 12. Laser control 15 13. Second stack 14. Second electrode 15. Layer of electrically conductive material 16. Additional electrode 17 First electrode 20 18. Material of change of state 19. Zone of dielectric material 20. Substrate 21. Level 22. Level 25 23. Level 24. Terminal 25. Terminal C1 First capacity C2. Second capacity 30 C3. Third capacity R1. Resistance of the third capacity C4. Fourth C5 capacity. Fifth capacity R2. Fifth capacity resistance 35
    权利要求:
    Claims (22)
    [0001]
    REVENDICATIONS1. A variable capacitance electric capacitor comprising at least a first stack having a first electrode (2) and a second electrode (5) facing the first electrode (2) and an area of a dielectric material (10) disposed between said first electrode (2) and second electrode (2, 5) characterized in that the second electrode (5) is formed on the one hand of a primary electrode (6) of an electrically conductive material and, on the other hand, of an additional electrode (7) comprising a state-change material (8), the primary electrode (6) and the additional electrode (7) facing the first electrode (2), said state-change material (8) being disposed at the least partially in contact with the primary electrode (6) and configured to take alternately a highly resistive state in which the additional electrode (7) is electrically isolated from the primary electrode (6) and a weakly resistive in which the additional electrode (7) is electrically conductive with the primary electrode (6) so as to vary the electrically active surface of the second electrode (5).
    [0002]
    2. Capacitor according to the preceding claim wherein the additional electrode (7) comprises a layer of electrically conductive material (9) arranged so that the change of state material (8) is placed at least partially between the primary electrode (6) and the layer of electrically conductive material (9) of the additional electrode (7).
    [0003]
    3. Capacitor according to any one of the preceding claims wherein the primary electrode (6) and the additional electrode (7) are at least partially superimposed.
    [0004]
    A capacitor according to any one of the preceding claims wherein the first electrode (2) comprises a first layer of electrically conductive material (3) and a second layer of electrically conductive material (4) electrically connected so as to encase the dielectric material (10), itself encasing the second electrode (5).
    [0005]
    5. Capacitor according to any one of claims 1 to 3 wherein the primary electrode (6) and the additional electrode (7) are at least partially in the same plane.
    [0006]
    A capacitor according to any one of the preceding claims wherein the state change material (8) comprises a discontinuous layer forming plots (11) placed in a matrix of dielectric material. 3030115 23
    [0007]
    7. Capacitor according to the preceding claim wherein the primary electrode (6) is a discontinuous layer configured to allow at least a partial overlap with the discontinuous layer of material change of state (8).
    [0008]
    A capacitor according to any one of the preceding two claims in combination with claim 2 wherein the electrically conductive material layer (9) of the additional electrode (7) is a discontinuous layer configured to allow at least partial recovery. with the discontinuous layer of state change material (8).
    [0009]
    The capacitor of any preceding claim wherein the state change material (8) is a bistable material.
    [0010]
    10. Capacitor according to any one of the preceding claims comprising means for controlling the state of the material of change of state (8).
    [0011]
    11. Capacitor according to the preceding claim in combination of claim 6 comprising independent control means for each parcel (11).
    [0012]
    12. Capacitor according to any one of the two preceding claims in combination of claim 2 wherein the control means are shaped to apply a potential difference between the primary electrode (6) and the layer of electrically conductive material (9). the additional electrode (7). 20
    [0013]
    13. Capacitor according to any one of claims 10 or 11 wherein the control means comprises a heat source configured to generate a heating of the state change material (8).
    [0014]
    14. Capacitor according to the preceding claim wherein the heat source is a light source. 25
    [0015]
    15. Capacitor with variable capacitance comprising at least two stacks according to any preceding claim, wherein one of the electrodes selected from the first or the second electrode of a stack n being common to an electrode selected from the second or the first electrode of an n + 1 stack, said common electrode being formed on the one hand of a primary electrode (4) of the n + 1 stack of an electrically conductive material and, on the other hand, of an additional electrode (16) comprising a state change material (18), the primary electrode (4) and the additional electrode (16) facing a first electrode (17) of the n + 1 stack said material a state-changing device (18) being disposed at least partially in contact with the primary electrode (4) and configured to alternatively assume a highly resistive state in which the additional electrode (16) is electrically isolated only the primary electrode (4) and a low resistive state 3030115 24 in which the additional electrode (16) is electrically conductive with the primary electrode (4) so as to vary the electrically active surface of said common electrode .
    [0016]
    16. Capacitor according to the preceding claim wherein the first electrode (2) of a stack n comprises a first layer of electrically conductive material (3) and a second layer of electrically conductive material (4) electrically connected so as to encase the second electrode (5) of the stack n and the zone of dielectric material (10) and in which the primary electrode of the stack n + 1 is formed by the second layer of electrically conductive material (4) of the first electrode (2) of the stack n.
    [0017]
    17. Capacitor according to any one of the two preceding claims wherein the first electrode (17) of the stack n + 1 is electrically connected to the primary electrode (6) of the stack n, so as to encase the second electrode (14). 15
    [0018]
    18. A method of varying the capacitance of a capacitor with variable capacitance according to any one of claims 1 to 17, characterized in that it comprises the application of a control signal of the state of the material with change of state. (8) so as to pass it from a highly resistive state in which the additional electrode (7) is electrically isolated from the primary electrode (6) and a weakly resistive state in which the additional electrode ( 7) is in electrical conduction with the primary electrode (6) so as to vary the electrically active surface of the second electrode (5) and thus the capacity of the capacitor.
    [0019]
    19. The method according to the preceding claim wherein the application of a control signal is of a duration limited to the change of state of the state change material (8) when the latter is bistable.
    [0020]
    The method according to any of the two preceding claims wherein the control signal is a potential difference applied between the layer of electrically conductive material of the primary electrode (6) and the layer of electrically conductive material (9) of the additional electrode (7). 30
    [0021]
    21. A method according to any one of claims 18 or 19 wherein the control signal is a heating of the state change material (8) generated by a heat source.
    [0022]
    22. Method according to the preceding claim wherein the heat source is a light source. 35
    类似技术:
    公开号 | 公开日 | 专利标题
    EP3032598A1|2016-06-15|Variable capacitance capacitor comprising a layer of state change material and method for varying a capacitance of a capacitor
    EP3457491B1|2020-06-17|System for rf/dc decoupling for rf switches made from phase change material
    EP1543535B1|2015-07-08|Method of manufacture of electrostatically actuated low response time power commutation micro-switches
    EP1562207A1|2005-08-10|Bistable microelectromechanical system
    US9502647B2|2016-11-22|Resistive random-access memory | with a low-K porous layer
    EP2836896B1|2017-12-20|Touch sensor and a fabrication method therefor
    EP1801897A1|2007-06-27|Improved method of producing PMC type memory cells
    EP3151296B1|2019-10-02|Method for manufacturing a resistive memory cell
    EP2680287B1|2016-01-13|Arrangement for a supercapacitor device, supercapacitor device comprising the arrangement, method for producing an arrangement
    EP2317533A1|2011-05-04|Capacitive micro-switch comprising a charge drain made up of directed nanotubes on the bottom electrode and method for manufacturing same
    FR2937462A1|2010-04-23|METHOD FOR PROTECTING AND DISSIPATING ELECTROSTATIC DISCHARGES ON AN INTEGRATED CIRCUIT
    FR3066854B1|2019-07-12|INTEGRATED MAGNETIC DEVICE WITH VARIABLE INDUCTANCE AND METHOD OF MAKING SAME
    EP3213146B1|2019-05-15|Reflective cell with modular reflectivity
    EP3125293A2|2017-02-01|Electrode for metal-insulator-metal structure, metal-insulator metal capacitance, and method for producing such an electrode and such a capacitance
    EP3520127A1|2019-08-07|Very high capacitance film capacitor and method for the production of same
    EP2885674B1|2017-02-01|Electroluminescent and electrochromic display device, and associated method of manufacture
    EP3214664B1|2018-08-15|Switch structure having multiple phase change material channels and interdigitated control electrodes
    FR3071646B1|2019-10-11|METHOD FOR MANUFACTURING A COMPUTER WITH RECURRENT NEURON NETWORKS
    EP3579255B1|2021-03-24|Integrated circuit comprising variable inductance
    EP0441269A1|1991-08-14|Electrostatic micromotor
    FR3087971A1|2020-05-01|POLARIZATION CIRCUIT OF A POWER COMPONENT
    FR2881567A1|2006-08-04|CAPACITOR WITH HIGH CLAMPING FIELD
    EP3171417A1|2017-05-24|Electro-chemically operable electronic component and method for producing the operable electronic component
    FR3113783A1|2022-03-04|RESISTIVE MEMORY WITH SWITCHING ZONE BETWEEN TWO DIELECTRIC REGIONS OF DIFFERENT DOPE AND/OR DIELECTRIC CONSTANTS
    FR3044823A1|2017-06-09|TRANSISTOR DEVICE DISTRIBUTED TO MULTIPLE OVERLAPPED LEVELS INTEGRATING A RESISTIVE MEMORY
    同族专利:
    公开号 | 公开日
    FR3030115B1|2017-12-15|
    US20160172113A1|2016-06-16|
    EP3032598A1|2016-06-15|
    US9824825B2|2017-11-21|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    WO2009128048A1|2008-04-18|2009-10-22|Nxp B.V.|Tunable capacitor and switch using mems with phase change material|
    US20050116276A1|2003-11-28|2005-06-02|Jing-Horng Gau|Metal-insulator-metal capacitor and fabrication method for making the same|
    US7634248B2|2006-08-01|2009-12-15|Carnegie Mellon University|Configurable circuits using phase change switches|
    DE102009047599A1|2009-12-07|2011-06-09|Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik|Electromechanical microswitch for switching an electrical signal, microelectromechanical system, integrated circuit and method for producing an integrated circuit|
    CN103855300B|2012-12-04|2017-03-29|中芯国际集成电路制造有限公司|Phase transition storage and forming method thereof|
    US9253822B2|2013-06-25|2016-02-02|International Business Machines Corporation|Phase change material variable capacitor|FR3005204A1|2013-04-30|2014-10-31|St Microelectronics Rousset|INTEGRATED SWITCHABLE CAPACITIVE DEVICE|
    US9253822B2|2013-06-25|2016-02-02|International Business Machines Corporation|Phase change material variable capacitor|
    JP6602279B2|2016-09-20|2019-11-06|株式会社東芝|Mem capacitor, neuro element and neural network device|
    TWI685980B|2017-04-25|2020-02-21|聯華電子股份有限公司|Conductive-insulating-conductive capacitor and method of fabricating the same|
    法律状态:
    2015-12-24| PLFP| Fee payment|Year of fee payment: 2 |
    2016-06-17| PLSC| Publication of the preliminary search report|Effective date: 20160617 |
    2016-12-22| PLFP| Fee payment|Year of fee payment: 3 |
    2017-12-20| PLFP| Fee payment|Year of fee payment: 4 |
    2019-12-31| PLFP| Fee payment|Year of fee payment: 6 |
    2020-12-28| PLFP| Fee payment|Year of fee payment: 7 |
    2021-12-31| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1462194A|FR3030115B1|2014-12-10|2014-12-10|VARIABLE CAPACITOR CAPACITOR COMPRISING A LAYER OF STATE CHANGING MATERIAL AND A METHOD OF VARYING A CAPACITY OF A CAPACITOR|FR1462194A| FR3030115B1|2014-12-10|2014-12-10|VARIABLE CAPACITOR CAPACITOR COMPRISING A LAYER OF STATE CHANGING MATERIAL AND A METHOD OF VARYING A CAPACITY OF A CAPACITOR|
    EP15198780.7A| EP3032598A1|2014-12-10|2015-12-09|Variable capacitance capacitor comprising a layer of state change material and method for varying a capacitance of a capacitor|
    US14/965,004| US9824825B2|2014-12-10|2015-12-10|Capacitor of variable capacity, comprising a layer of a phase change material, and method for varying the capacity of a capacitor|
    [返回顶部]